InAs Wafer
InAs is an important III-V semiconductor for manufacturing midwavelength infrared typeⅡsuperlattice lasers and detectors. The GaSb based infrared lasers and detectors have been widely used to night vision, communications, meteorology, atmospheric monitoring, industrial flaw detection, the earth's resources exploration, temperature, etc.
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Product Name
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InAs Wafer
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Unit
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Diameter
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50.8 ~ 76.2
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mm
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Orientation*
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(100)(111) ± 0.5°
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degree
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Thickness*
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(350~600) ± 25
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µm
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Type/Dopant
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N / Sn
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N / S
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P / Zn
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N / Undoped
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-
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Carrier Concentration
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(5-20)x1017
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(3-80)x1018
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(3-80)x1018
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(5-20)x1016
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cm-3
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Mobility
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>2000
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>2000
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60-300
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≥20000
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cm2/Vs
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Etch Pitch Density
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≤ 50000
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cm2
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TTV*
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≤ 10
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µm
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Warp
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≤ 15
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µm
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Surface
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Etched or Polished
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* Other customized specifications are welcome
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