InP wafer

InP is commonly used in high-power and high-frequency electronics devices because of its superior electron velocity characteristics. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial InGaAs based opto-electronic devices.


Growth

LEC

 

Type / Dopant

N/S

SI/Fe

 

Diameter

50.8 ± 0.5

76.2 ± 0.5

50.8 ± 0.5

76.2 ± 0.5

mm

Thickness

450 ± 25

625 ± 25

µm

Resistivity

(1-10) X 10-3            

Not Specified

.cm

Orientation

(100) ± 0.5˚

degree

Primary  Orientation

(0-1-1)

(0-1-1)

degree

Length

16 ± 1

22 ± 1

16 ± 1

22 ± 1

mm

Secondary Orientation

(0-11)

(0-11)

degree

Length

7 ± 1

11 ± 1

11 ± 1

11 ± 1

mm

Mobility

> 1000

Not Specified

cm2/V.S

Carrier Concentration

(1-10) X 1018

Semi Insulating

atm/cm-3

Etch Pit Density

2500

Not Specified

ea/cm-2

Front Side Surface

Polished in Epi-ready

 

Back Side Surface

Etched