GaAs Wafer

GaAs is a compound semiconductor material which is made by arsenic and gallium, is a kind of the electronic information material with excellent performance. It is the most widely used in mobile communication, satellite communication, semiconductor lighting (LED) radar and infrared detection, efficient solar cells and laser diode (LD).


 

Parameter Spec Unit
Product Name Single Crystal Gallium Arsenide,GaAs Wafer   
Diameter 2” 4” mm
Thickness  350± 20 350± 25 μm
Dopant N/Si  
Surface Orientation 2 º , 6 º and 15º ± 0. 5º off toward (011/111) degree
Primary Flat      Orientation          (0-1-1) ± 0. 5º (0-1-1) ± 1.0º degree
Length 16 ± 1.0 32.5 ± 1.0 mm
Secondary Flat   Orientation     (0-11) ± 0. 5º (0-11) ± 0. 5º degree
Length 8 ± 1.0 18 ± 1.0 mm
Hall Mobility 1500 1500 cm2/V.S
Etch Pit Density 2000 5000 cm-2
Carrier Concentration (0.4-2.5) x 1018 (0.4-2.5) x 1018 cm-3
TTV 10 15 μm
Bow 10 15 μm
Warp 10 15 μm
Roughness Front Side  Polished  
Roughness Back Side Polished or Etched