SOI wafer
4" 5" 6" 8" SOI wafer
SOI wafers apply to a wide range of products across a broad base of industries like MEMS and CMOS integrated circuit fabrication.
Commonly, SOI wafers can deliver better performance on SOI devices.
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Product Name
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SOI Wafer
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Unit
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Diameter
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100
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125
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150
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200
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mm
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Substrate Specification
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Growth Method
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CZ / MCZ / FZ
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µm
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Orientation
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<100> / <111> / <110>
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Dopant
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P: Boron
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N: Arsenic / Antimony / Phosphorus/ Red Phosphorus
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Resistivity*
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0.001 ~ 20000
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Ω.cm
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Device Layer
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Thickness*
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≥ 1.5
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0.1~ 300
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µm
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Buried Oxide Layer
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Thickness*
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0.02 ~ 5.0
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µm
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Handle Layer
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Thickness*
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200 ~ 1250
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500 ~ 750
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µm
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Surface
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Lapped / Etched / Polished
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* Other customized specifications are welcome
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