LN wafer (Lithium niobate)

LN Wafer (LiNbO3) 

LN wafer is an ideal material for versatile applications in the fields of photonics and optoelectronics such as Detectors, Sensors, Phased-array radar and Electro-optic modulators..etc. The single crystal LN thin films will be used for developing wide-bandwidth, high speed and high efficiency electronic devices and photonic circuits.


 Lithium Niobate LN wafers for photonics and optoelectronics

 

Single-crystal LN thin film/SiO2 layer/LN substrate

Parameter

Specification

Unit

Grade

Prime

 

Diameter

3

inches

Top LN Layer

Growth method

Ion implantation / Wafer bonding

 

Orientation

<+Z> ± 0.5

degree

Thickness

300 ~ 700 ± 50

nm

Thickness uniformity

 ± 5

%

Surface roughness

< 1

nm

Buried Oxide

Growth method

PECVD

 

Thickness

2000 ± 100

nm

Thickness uniformity

 ± 5

%

Refractive index

1.46 ~ 1.47

 

Handle Wafer

Thickness

0.51 ± 0.05

mm

Orientation

<+Z> ± 0.5

degree

Back side surface

Polished

 

Flat alignment

± 0.1

mm