Ge Wafer for CPV
Germanium wafer is an excellent semiconductor material and widely used in variety applications such as Sensor, Solar cell, Infrared optics applications, high brightness LEDs, and various semiconductor applications.
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Growth
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CZ or VGF
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Diameter
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100 ± 0.4
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150 ± 0.5
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mm
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Thickness
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175 ± 25
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250 ± 25
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µm
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Dopant
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Ga
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Orientation
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(100) 6˚ toward (111) ± 0.5
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degree
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Primary Flat Orientation
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(100) ± 0.5
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degree
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Length
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32.5 ± 2.5
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57.5 ± 2.5
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mm
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Secondary Flat Orientation
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None
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Resistivity
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0.001 - 20
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Ω.cm
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Mobility
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(0.25 - 1.5) X 103
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cm2/v.s
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Carrier Concentration
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(0.1 - 5.0) X 1018
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ea/cm-3
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Etch Pit Density
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≦ 500
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ea/cm-2
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Front Side Surface
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Epi ready Polished
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Back Side Surface
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Etch
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Edge Profile
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Round
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