LN/ LT wafer (Lithium Niobate/ LithumTantalate)
LN Wafer (LiNbO3)
LN wafer is an ideal material for versatile applications in the fields of photonics and optoelectronics such as Detectors, Sensors, Phased-array radar and Electro-optic modulators..etc. The single crystal LN thin films will be used for developing wide-bandwidth, high speed and high efficiency electronic devices and photonic circuits.
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Product Name
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Lithium Niobate LiNbO3 (LN) Wafer
LithumTantalate LiTaO3 (LT) Wafer
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Unit
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Diameter
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76.2
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100
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150
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mm
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Orientation
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LN: 64° Rot. Y-cut±0.2° / 127.86° Rot. Y-cut±0.2° / Y-cut±0.2
LT:36° Rot. Y-cut±0.2° / 42° Rot. Y-cut±0.2° / X-cut±0.2°
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degree
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Primary Flat
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LN: Perpendicular to X ± 0.2° / Perpendicular to Z±0.2°
Perpendicular to X ± 0.2° / Perpendicular to 112.2° Y±0.2°
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degree
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Secondary Flat
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LN: CW 180° / CW 225° / CW 270°±0.5° from Primary
LT: CW 225° / CW 270° / CW 315°±0.5° from Primary
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degree
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Thickness*
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(200~500) ± 20
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μm
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TTV
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≤ 10
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μm
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Bow
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≤ 25
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μm
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Front Surface
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Ra ≤ 8
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Å
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Back Surface
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LN: 0.2 ≤ Ra ≤ 0.7
LT:0.2 ≤ Ra ≤ 0.5 or 0.08 ≤ Ra ≤ 0.15
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μm
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Edge Beveling
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Rounded
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Curie Temp.
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LN: 1142 ± 3
LT:605 ± 3
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̊C
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* Other surface conditions & customized specifications are welcome
* Blackening or Non-Blackening is also available
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