Ga2O3 Gallium Oxide Wafer
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Ga2O3 Gallium Oxide Wafer |
Unit |
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Diameter |
50.8±0.3 |
100±0.5 |
mm |
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Orientation |
<-201> |
<001> |
degree |
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Dopant/ Conductivity |
Sn/ N |
Undoped/ N |
Fe/Insulating |
Sn/ N |
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Doping concentration |
5E17~9E18 cm-3 |
<5E17 cm-3 |
R＞1010Ω・cm |
1E18～ 2E19 cm-3 |
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Thickness |
650±20 |
um |
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Offset angle |
[010]:0±0.4 |
[010]:0±0.4 |
[010]:0 ±1 |
[010]:0±1 |
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FWHM |
[010]:≦150 |
[010]:≦150 |
[010]:≦150 |
[010]:≦350 |
arcsec |
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Surface |
SSP |
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