Ga2O3 Eptixial wafer
Unit
Diameter
50.8 ~ 100 (Ga2O3 wafer substrate)
mm
Epi layer Type
Ga2O3 on Ga2O3
GaN on Ga2O3
degree
Dopant/ Conductivity
Si/ N
Doping concentration
2E16～ 9E16
1E18～ 1E19
cm-3
Thickness
5-10
2~6
um
