SiC wafer
SiC Silicon Carbide wafer is the foremost semiconductor material that can operate at the better dissipation, power level, and voltage. These unique properties of SiC can apply to various applications like Power electronic Power, 5G, RF, LED technology and Hybrid Electric vehicles.
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Product Name |
SiC Wafer |
Unit |
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Diameter |
50.8 |
76.2 |
100 |
150 |
mm |
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Type |
4H- N (Nitrogen) / 4H-SI (Semi-Insulating) |
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Resistivity |
4H-Ni: 0.015 ~ 0.028 ; 4H-SI: >1E5 |
Ω.cm |
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Thickness* |
(330 ~ 500) ± 25 |
µm |
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Orientation* |
On-axis: <0001> ± 0.5˚ Off-axis: 4˚± 0.5˚off toward (11-20) |
degree |
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Primary Flat* |
(10-10) ± 5.0˚ |
degree |
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Secondary Flat |
Silicon Face: 90˚CW from Primary ± 5.0˚ |
None |
degree |
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TTV* |
≤15 |
µm |
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Bow* |
≤25 |
≤40 |
µm |
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Warp* |
≤25 |
≤35 |
≤40 |
≤60 |
µm |
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Micropipe Density |
Zero:≤1 / Production:≤5 / Dummy:≤15 |
cm-2 |
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Roughness |
Polished (Ra≤1) |
nm |
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CMP (Ra≤0.5) |
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* Other customized specifications are welcome |
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