GaN HEMT epitaxial wafer
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Product Name
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GaN EPI Wafers
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Unit
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Substrate
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Silicon
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HR Silicon
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SiC
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Sapphire
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Diameter
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50.8 ~ 200
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150 ~ 200
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50.8 ~150
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mm
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Epi-layer thickness
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>3
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~2
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0.5~3
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µm
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Crystalline AlGaN/GaN HEMT
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<800'' (002)
&
<2000'' (102)
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<700'' (002)
&
<1350'' (102)
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<250''
(2µm GaN)
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<400''
(2um GaN)
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Composition AlGaN/GaN HEMT
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AlxGa1-xN (0<x<0.5)
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AlGaN barrier thickness
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2~50
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nm
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AlN spacer*
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0.2-2
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nm
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Surface morphology (5x5µm2)
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RMS<0.5
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nm
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Bow
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<50
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µm
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2DEG
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>9E12(25nm Al0.25GaN)
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>8E12
(25nm Al0.25GaN)
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/cm2
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Electron mobility (cm2/Vs)
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>1500
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>1800
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>2000
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>1500
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cm2/Vs
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Sheet resistance
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<400(25nm Al0.25GaN)
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Ω.cm
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Buffer resistivity
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>105
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Ω.cm
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* Other customized specifications are welcome
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