Silicon Epitaxial
Epitaxy is a layer of single-crystal silicon deposited onto a single-crystal silicon wafer. The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate's crystalline structure.
| Characteristics | Maximum Limit | ||||
| Dopant | P,P+Boron N,N+:Phosphorus, Arsenic | ||||
| Orientation | <100>, <111> | ||||
| Resistivity | Epi Reactor | Diameter | Type | Epi resistivity | Uniformity |
| Batch | 100mm | P/P++; N/N+ | 4x10-3 (P:1x10-2)-3 ohm.cm | ≦ ±3% | |
| 125mm | N/N++,N/N+/N+ | 3-30 ohm.cm | ≦ ±5% | ||
| 150mm | N/P/P; P/N/N+ | 30-1000 ohm.cm | ≦ ±8% | ||
| Single | 150mm | P/P++; N/N+ | 0.3-3 ohm.cm | ≦ ±2% | |
| 200mm | N/N+/N++ | 3-30 ohm.cm | ≦ ±4% | ||
| Thickness | Epi Reactor | Diameter | Type | Epi thickness | Uniformity |
| Batch | 100mm | P/P++; N/N+ | 3-100 μm | ≦ ±3% | |
| 125mm | N/N++,N/N+/N+ | ||||
| 150mm | N/P/P; P/N/N+ | ||||
| Single | 150mm | P/P++; N/N+ | 0.1-20 μm | ≦ ±2% | |
| 200mm | N/N+/N++ | ||||
| Stacking Faults | ≦ 10 ea/cm2 | ||||
| Slip | ≦ 5 lines, total length <1/2 diameter | ||||
| Surface Condition | Free of Haze, Scratches, Craters, Orange Peel, Cracks, Crow's Feet, | ||||
| Edge Chips,Foreign Matter, Back Surface Contamination | |||||
| Edge Crown | Projection above wafer surface not to exceed 1/3 of Epi layer thickness | ||||
| Point Defects | SEMI Standard | ||||