GaN-FS wafer

Free standing GaN (Gallium Nitride) substrate wafer is mainly used for UHB-LED and LD application. The well-known effect of using free-standing GaN substrates can be improved material quality, reducing parasitic resistance effects for creating nitride semiconductor devices.


Item

GaN-FS

 

Type

N-type

Semi-Insulating

 

Diameter

50.8 ± 1.0

mm

Thickness

260 ± 25

µm

Resistivity

< 0.5

> 106

.cm

Orientation

C-axis(0001) ± 0.5˚

degree

Primary  Orientation

(1-100) ± 0.5˚

degree

Length

16 ± 1.0

mm

Secondary Orientation

(11-20) ± 2.0˚

degree

Length

8 ± 1.0

mm

Dislocation Density

< 5 X 106

cm-2

Macro Defect Density

A Level

3

cm-2

B Level

> 3

cm-2

TTV

20

µm

BOW

30

µm

Front Surface

Ra < 0.3nm Epi-ready Polished

 

Back Surface

1. Fine ground  2. Rough grinded