GaN-FS wafer

Free standing GaN (Gallium Nitride) substrate wafer is mainly used for UHB-LED and LD application. The well-known effect of using free-standing GaN substrates can be improved material quality, reducing parasitic resistance effects for creating nitride semiconductor devices.


Product Name

GaN-FS

 

Diameter

50.8 ± 1.0

100 mm ± 0.1

mm

Type/Dopant

N / Ge

N / Undoped

SI / Fe

N / Undoped

N / Si

 

Resistivity

< 0.05

< 0.5

>106

< 0.5

< 0.05

.cm

Orientation*

C-plane (0001) off toward M-Axis 0.35°± 0.15°

C-plane(0001) ± 0.5°

degree

Thickness*

350~500 ± 25

µm

Dislocation Density

(0.5~3) x 106

(0.1~3) x 106

(0.1~3) x 106

>5 x 106

cm-2

Front Surface

Polished (Ra<0.2nm)

 

Back Surface

Fine ground

 

Useable Surface Area

> 90

%

* Other conditions & customized specifications are welcome