GaN Templates Wafer

GaN templates wafers represent breakthrough cost savings in manufacturing LEDs, LDs and Power Electronic Devices.GaN templates consist of crystalline layers of gallium nitride which includes a layer of GaN deposited epitaxially on a sapphire substrate.

 


Item

GaN-T

 

Type

N-type

Semi-Insulating

 

Diameter

50.8 ± 1.0

mm

Thickness

15 / 20 / 30 / 40

30 / 90

µm

Resistivity

< 0.05

> 106

.cm

Orientation

C-axis(0001) ± 1.0˚

degree

Dislocation Density

< 1 X 108

cm-2

Substrate Structure

Thick GaN on Sapphire (0001)

µm

Front Surface

 Epi-ready Polished

 

Back Surface

1. Fine ground 2. Polished