GaN Templates Wafer

GaN templates wafers represent breakthrough cost savings in manufacturing LEDs, LDs and Power Electronic Devices.GaN templates consist of crystalline layers of gallium nitride which includes a layer of GaN deposited epitaxially on a sapphire substrate.

 


Product Name
GaN-Temp
Unit
Diameter
50.8 ± 0.1
100 ± 0.1
mm
Orientation
C-axis(0001) ± 0.5˚
degree
Type
P-type
 (Mg-doped)
N-type
(Si-doped)
N-type
 (Undoped)
 
Resistivity
~10
< 0.5
< 0.05
Ω.cm
Thickness
4
4 or 20
µm
Carrier Concentration
> 6 X 1016
< 5 X 1017
> 1 X 1018
cm-3
Mobility
~10
~300
~200
cm2/V.s
Dislocation Density
< 5 X 108
cm-2
Substrate Structure
 GaN on Sapphire (0001) (SSP or DSP)
 
Useable Surface Area
> 90
%