GaN Templates Wafer
GaN templates wafers represent breakthrough cost savings in manufacturing LEDs, LDs and Power Electronic Devices.GaN templates consist of crystalline layers of gallium nitride which includes a layer of GaN deposited epitaxially on a sapphire substrate.
|
Product Name
|
GaN-Temp
|
Unit
|
|||
|
Diameter
|
50.8 ± 0.1
|
100 ± 0.1
|
mm
|
||
|
Orientation
|
C-axis(0001) ± 0.5˚
|
degree
|
|||
|
Type
|
P-type
(Mg-doped)
|
N-type
(Si-doped)
|
N-type
(Undoped)
|
||
|
Resistivity
|
~10
|
< 0.05
|
< 0.5
|
Ω.cm
|
|
|
Thickness
|
4
|
4 or 20
|
µm
|
||
|
Carrier Concentration
|
> 6 X 1016
|
> 1 X 1018
|
< 5 X 1017
|
cm-3
|
|
|
Mobility
|
~10
|
~300
|
~200
|
cm2/V.s
|
|
|
Dislocation Density
|
< 5 X 108
|
cm-2
|
|||
|
Substrate Structure
|
GaN on Sapphire (0001) (SSP or DSP)
|
||||
|
Useable Surface Area
|
> 90
|
%
|
|||