GaN HEMT epitaxial wafer


 

 
III-Nitride based HEMT epitaxial wafer Spec
 Spec
Growth
MOCVD
Diameter
2”,3",4”
Orientation
C-axis(0001)
Structure
AlGaN/GaN
Electrical specifications
Sheet resistance
280Ω to 500Ω
Mobility
1800 cm2/V·s
sheet density
8E+12cm-2
Substrate
SiC, Sapphire
* Structure and Electrical can be customized as required