AlGaInP Epitaxial
Atecom offers 2", (100) and (111) orientations, Prime / Test grade epi-ready GaAs wafers. Semi- conductive, single-side and double-side epi-ready polishing wafers are available.
| AlGaInP Red/Yellow/Yellow Green LED Chip Spec | |||||||||||||
| Growth | MOCVD | ||||||||||||
| Diameter | 2”,4” | ||||||||||||
| EPI Wafer Structure | |||||||||||||
| High-Dopant p-GaP level | 100 – 300nm | ||||||||||||
| p-GaP Window level | 6 – 12um | ||||||||||||
| Emitting Area | AlGaInP | ||||||||||||
| DBR | DBR | ||||||||||||
| Substrate | n-GaAs 350um | ||||||||||||
| EPI Wafer Parameter | |||||||||||||
| Item | Unit | Red | Yellow | Yellow/Green | Description | ||||||||
| Wave Length (λD) | nm | 620 ~ 630 | 587 ~ 592 | 568 ~ 573 | IF =20mA | ||||||||
| VF | V | < 2.2 | < 2.2 | < 2.2 | Forward Voltage | ||||||||
| (Iv) | Mcd | F | 70 – 80 | F | 60-70 | F | 10 – 15 | IF =20mA | |||||
| G | 80 – 90 | G | 70 – 80 | G | 15 – 20 | ||||||||
| H | 90 – 100 | H | 80 – 90 | H | 20 – 25 | ||||||||
| I | 100 – 110 | I | 90 – 100 | I | 30 – 35 | ||||||||
| J | 110 – 120 | J | 100 – 110 | J | 35 – 40 | ||||||||
| K | 120 – 130 | K | > 110 | K | 40 – 45 | ||||||||
| L | 130 – 140 | L | > 45 | ||||||||||
| M | > 140 | ||||||||||||
| Notes： | |||||||||||||
| l Wave Length and Luminous intensity can be change by customer request. | |||||||||||||
| l Luminous intensity data is base on the chip size test result that made from ATECOM’s EPI Wafer，Red Led is base on 12×12mil2,Yellow and Yellow/Green Led are base on 8×8mil2 . The real electronic performance will be fully rely on chip process. | |||||||||||||