AlGaInP Chip
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AlGaInP Red/Yellow/Yellow Green LED Chip Spec
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Spec
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EPI Wafer Size
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Growth
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MOCVD
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Diameter
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2”,4”
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EPI Wafer Structure
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High-Dopant
p-GaP level
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100 – 300nm
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p-GaP Window level
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6 – 12um
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Emitting Area
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AlGaInP
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DBR
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DBR
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Substrate
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n-GaAs 350um
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EPI Wafer Parameter
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Unit
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Red
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Ultra Red
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Yellow
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Yellow/Green
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Description
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nm
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630 ~ 660
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620 ~ 630
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585 ~ 597
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568 ~ 576
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IF =20mA
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V
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< 2.2
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< 2.2
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< 2.2
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< 2.2
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Forward Voltage
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mcd
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D
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30 – 40
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E
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40 – 50
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E
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40 – 50
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A
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0 – 10
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IF =20mA
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E
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40 – 50
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F
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50 – 60
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F
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50 – 60
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B
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10 – 20
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F
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50 – 60
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G
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60 – 70
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G
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60 – 70
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C
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20 – 30
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G
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60 – 70
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H
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70 – 80
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H
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70 – 80
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D
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30 – 40
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H
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70 – 80
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I
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80 – 90
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I
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80 – 90
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E
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40 – 50
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I
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80 – 90
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J
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90 – 100
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J
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90 – 100
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F
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50 – 60
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J
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90 – 100
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K
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100 – 110
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K
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100 – 110
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L
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110 – 120
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L
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110 – 120
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Notes：
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* Wave Length and Luminous intensity can be change by customer request.
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* Luminous intensity data is base on the chip size test result that made from ATECOM’s EPI Wafer，Red Led is base on 12×12mil2,Yellow and Yellow/Green Led are base on 8×8mil2 . The real electronic performance will be fully rely on chip process.
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