SiC wafer

SiC Silicon Carbide wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of SiC can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.


Product Name

SiC Wafer

Unit

Diameter

50.8

76.2

100

150

mm

Type

4H- N / 4H-SI / 6H-N / 6H-SI

 

Resistivity

4H-N: 0.015 ~ 0.028 ; 4H/6H-SI: >1E5 ; 6H-N: 0.02 ~ 0.1

Ω.cm

Thickness*

(330 ~ 500) ± 25

µm

Orientation*

On-axis: <0001> ± 0.5˚

Off-axis: 4˚± 0.5˚off toward (11-20)

degree

Primary Flat*

(10-10) ± 5.0˚

degree

Secondary Flat

 Silicon Face: 90˚CW from Primary ± 5.0˚

None

degree

TTV*

≤15

µm

Bow*

≤25

≤40

µm

Warp*

25

35

40

60

µm

Micropipe Density

 Zero:1 / Production:5 / Research:15 / Dummy:50

cm-2

Roughness

Polished (Ra≤1)

nm

CMP (Ra≤0.5)

* Other customized specifications are welcome

* Moissanite for Diamond application is also available