SiC wafer

SiC wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of SiC can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.


 

Growth PVT Unit
  SiC - 4H / SiC - 6H SiC - 4H  
Diameter  50.8 ± 0.5 76.2 ± 0.5 100.2 ± 0.5 mm
Surface Orientation <0001> Axis/3.5˚/4˚/8˚±0.5˚off toward(11-20) <0001> Axis / 4˚ ± 0.5˚ off toward (11-20) degree
Type / Dopant N / Nitrogen Semi - Insulating Semi - Insulating N / Nitrogen  
Resistivity 4H ≦ 0.03 / 6H ≦ 0.1  ≦ 1.0 x 105 ≦ 1.0 x 105 ≦ 0.03 Ωcm
Thickness  330 or 430 ± 30 350 ± 30 µm
Primary Flat (10-10) ± 5.0˚ degree
Primary Length 16 ± 1.5 22.5 ± 2.5 32.5 ± 2.5 mm
Secondary Flat 90˚ CW from Primary ± 5.0˚  degree
Primary Length 8 ± 1.5 11.5 ± 1.5 18.0 ± 2.5 mm
Micropipe Density ≦ 15 cm-2
TTV  ≦ 30 ≦ 30 ≦ 50 µm
BOW ≦ 30 ≦ 40 ≦ 50 µm
Usable Area 90%  
Front Side Surface Polished  
Back Side Surface Etched or Polished