SiC Epi

SiC EPI wafers are used in producing Schottky diodes, MOSFETs, JFETs, and BJTs over a wide voltage range and customized wafers for thyristors, GTOs and IGBTs over a wider voltage range for medium to very high voltage power conversion system applications.


 

Parameters

Specification

Unit

Diameter

4" ~ 6"

 

Poly-type

4H

 

Conductivity

N-type

P-type

 

Dopant

Nitrogen

Aluminum

 

Surface

(0001) Siliocn-face

 

Off-orientation

4 deg off towrd <11-20>

 

Carrier Concentration

5E15~1E18

5E15~1E19

cm-3

Thickness

0.5~20

0.5~5

µm

Surface Defect

2.0

cm-2

Roughness (10µmX10µm)

2.0

nm

Scratches

<1 x wafer diameter

ea/mm

Usable Area

90

%