SiC Epi
SiC EPI wafers are used in producing Schottky diodes, MOSFETs, JFETs, and BJTs over a wide voltage range and customized wafers for thyristors, GTOs and IGBTs over a wider voltage range for medium to very high voltage power conversion system applications.
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Product Name
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SiC / SiC Wafer
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Unit
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Diameter
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50.8 ~ 150
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mm
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Conductivity
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N - Type
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P -Type
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Dopant
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Nitrogen
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Aluminum
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Carrier Concentration
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9 x 1014 ~ 1 x 1019
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9 x 1014 ~ 1 x 1019
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cm-3
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Tolerance
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± 15
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± 50
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%
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Uniformity
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≤ 10
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≤ 20
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%
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Thickness*
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0.2 ~ 50
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µm
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Tolerance
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± 10
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%
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Uniformity
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≤ 10
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%
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Defects
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< 1
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cm-2
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Roughness (20µmX20µm)
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≤ 0.5
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nm
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Scratches
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<1 x wafer diameter
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ea/mm
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Usable Area
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≥90
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%
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* Other customized specifications are welcome
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