SiC Ingot


 

Growth

PVT

Unit

 

SiC - 4H / SiC - 6H

 

Diameter

50.8 ± 0.5

76.2 ± 0.5

mm

Surface Orientation

<0001> Axis/3.5˚/4˚/8˚±0.5˚off toward(11-20)

degree

Type / Dopant

N / Nitrogen  Semi - Insulating

 

Thickness

5~10 / 10~15 / > 15

mm

Primary Flat

(10-10) ± 5.0˚

degree

Primary Length

16 ± 1.5

22.5 ± 2.5

mm

Secondary Flat

90˚  CW from Primary ± 5.0˚

degree

Primary Length

8 ± 1.5

11.5 ± 1.5

mm

Hardness

9~9.25

Moh

Moh

3.22

g/cm3

Reflective index

2.65 - 2.69

No

Usable Area

90%

 

Front Side Surface

Lapped or Polished

 

Back Side Surface

Lapped or Polished