SiC Diodes
SiC diodes are characterized by high speed, frequency, temperature and high voltage resistance function. SiC diodes have the properties of miniaturization, light weight, radiation resistance, interfere resistance and high stability for widely used in microwave, communication, ultraviolet detector and power electronics applications.
SiC diodes (600V~1700V)
|
Products |
VDC |
IF |
QC(Typ.) |
Package |
|
Diode |
600V |
5A |
15nC |
TO-220 |
|
600V |
5A |
15nC |
TO-252 |
|
|
600V |
10A |
26nC |
TO-220 |
|
|
650V |
10A |
26nC |
TO-220 |
|
|
600V |
20A |
26nC* |
TO-247 |
|
|
650V |
20A |
26nC* |
TO-247 |
|
|
600V |
30A |
20nC |
TO-220 |
|
|
1200V |
4A |
27nC |
TO-220 |
|
|
1200V |
10A |
60nC |
TO-220 |
|
|
1200V |
20A |
129nC |
TO-220 |
|
|
1200V |
40A |
129nC* |
TO-247 |
|
|
1700V |
10A |
97nC |
TO-220 |
|
|
* Per leg |